Patent Application 17884455 - SILICON WAFER PREPARATION METHOD OF SILICON - Rejection
Appearance
Patent Application 17884455 - SILICON WAFER PREPARATION METHOD OF SILICON
Title: SILICON WAFER, PREPARATION METHOD OF SILICON WAFER, AND PASSIVATION TREATMENT SOLUTION
Application Information
- Invention Title: SILICON WAFER, PREPARATION METHOD OF SILICON WAFER, AND PASSIVATION TREATMENT SOLUTION
- Application Number: 17884455
- Submission Date: 2025-04-10T00:00:00.000Z
- Effective Filing Date: 2022-08-09T00:00:00.000Z
- Filing Date: 2022-08-09T00:00:00.000Z
- National Class: 428
- National Sub-Class: 336000
- Examiner Employee Number: 86958
- Art Unit: 1713
- Tech Center: 1700
Rejection Summary
- 102 Rejections: 1
- 103 Rejections: 1
Cited Patents
No patents were cited in this rejection.
Office Action Text
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Claims 15-20 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to nonelected inventions, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 03/12/2025. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless â (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claims 1-4 and 9-14 are rejected under 35 U.S.C. 102(a)(1)/(a)(2) as being anticipated by Li et al (CN 107039241 A, Machine Translation). As to claim 1, Li discloses a method for preparing a silicon wafer [Abstract], comprising: providing a solar silicon ingot [pg. 2, âBackground technologyâ]; cutting the solar silicon ingot with a first treatment solution to form a pretreated silicon wafer [claim 1, steps 3-4]; degluing the pretreated silicon wafer with a second treatment solution to obtain a deglued silicon wafer [claim 1, step 5]; and cleaning the deglued silicon wafer with a third treatment solution to obtain the silicon wafer [claim 1, âdeionized waterâ]; wherein at least one of the first treatment solution, the second treatment solution, or the third treatment solution comprises a non-metallic compound that is bonded with a silicon ion via a single bond [claim 1, steps 3-4, âammonium fluorideâ]. As to claim 2, Li discloses the method according to claim 1, wherein the non-metallic compound comprises at least one of a fluorine-containing compound [claim 1, steps 3-4, âammonium fluorideâ], an iodine-containing compound, a hydrogen-containing compound, a bromine-containing compound, or a cyano-containing compound. As to claim 3, Li discloses the method according to claim 2, wherein the fluorine-containing compound comprises at least one of potassium fluoride, sodium fluoride, hydrogen fluoride, lithium fluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, or ammonium fluoride [claim 1, steps 3-4, âammonium fluorideâ]. As to claim 4, Li discloses the method according to claim 3, wherein the fluorine-containing compound comprises at least one of potassium fluoride or ammonium fluoride [claim 1, steps 3-4, âammonium fluorideâ]. As to claim 9, Li discloses the method according to claim 1, wherein at least one of the first treatment solution, the second treatment solution, or the third treatment solution comprises the non-metallic compound with a mass ratio of less than or equal to 10% [Example 4, âammonium fluoride in the etching liquid is 10%â, which anticipates the claimed range as a specific example within the claimed range. See MPEP 2131.03, I.]. As to claim 10, Li discloses the method according to claim 9, wherein at least one of the first treatment solution, the second treatment solution [claim 5, step 5âhere, less than 1% is expected to be present], or the third treatment solution [claim 1, âdeionized waterâ âhere, only trace amounts are expected to remain after step (5)] comprises the non-metallic compound with a mass ratio of less than or equal to 1%. As to claim 11, Li discloses the method according to claim 9, wherein the first treatment solution has a conductivity of greater than 20 us/cm [claim 1, steps 3-4; Example 4, here the etching liquid is expected to have a conductivity far in excess of 20 microSiemens/cm]. As to claim 12, Li discloses the method according to claim 11, wherein the first treatment solution has a conductivity of greater than 30 us/cm [claim 1, steps 3-4; Example 4, here the etching liquid is expected to have a conductivity far in excess of 20 microSiemens/cm]. As to claim 13, Li discloses the method according to claim 1, further comprising removing impurities from the pretreated silicon wafer prior to degluing [claim 1, steps 3-4, âsilicon ingot is completely immersedâ]. As to claim 14, Li discloses the method according to claim 1, wherein the non-metallic compound is added during cutting [claim 1, steps 3-4]. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 5-8 are rejected under 35 U.S.C. 103 as being unpatentable over Li et al (CN 107039241 A, Machine Translation), as applied to claims 1-4 and 9-14 above. As to claim 5, Li discloses the method according to claim 2, but fails to explicitly disclose: wherein the iodine-containing compound comprises at least one of potassium iodide, sodium iodide, tetramethylammonium iodide, tetraethylammonium iodide, ammonium iodide, or p-iodophenol. However, Liâs teaching of using hydrogen fluoride or ammonium fluoride to capture dissolved metal ions would prompt one of ordinary skill in the art to consider other compounds capable of forming strong bonds with metals via highly electronegative ions. One of ordinary skill in the art would envisage compounds comprising other halogen elements including iodine and bromine, and further other highly electronegative ions, such as cyanide. Therefore, it would have been obvious to try other halogen elements or other highly electronegative ions that are effective at forming strong bonds with metals in the cutting solution of Li, in order to achieve the same effect of capturing dissolved metal ions [pg. 2, âInvention contentâ], with predictable results. As to claim 6, modified Li discloses the method according to claim 5, wherein the iodine-containing compound comprises potassium iodide. See rejection of claim 5. As to claim 7, Li discloses the method according to claim 2, but fails to explicitly disclose: wherein the bromine-containing compound comprises at least one of hydrogen bromide, potassium bromide, sodium bromide, lithium bromide, or ammonium bromide. However, Liâs teaching of using hydrogen fluoride or ammonium fluoride to capture dissolved metal ions would prompt one of ordinary skill in the art to consider other compounds capable of forming strong bonds with metals via highly electronegative ions. One of ordinary skill in the art would envisage compounds comprising other halogen elements including iodine and bromine, and further other highly electronegative ions, such as cyanide. Therefore, it would have been obvious to try other halogen elements or other highly electronegative ions that are effective at forming strong bonds with metals in the cutting solution of Li, in order to achieve the same effect of capturing dissolved metal ions [pg. 2, âInvention contentâ], with predictable results. As to claim 8, discloses the method according to claim 2, but fails to explicitly disclose: wherein the cyano-containing compound includes at least one of potassium cyanide, sodium cyanide, or ammonium cyanide. However, Liâs teaching of using hydrogen fluoride or ammonium fluoride to capture dissolved metal ions would prompt one of ordinary skill in the art to consider other compounds capable of forming strong bonds with metals via highly electronegative ions. One of ordinary skill in the art would envisage compounds comprising other halogen elements including iodine and bromine, and further other highly electronegative ions, such as cyanide. Therefore, it would have been obvious to try other halogen elements or other highly electronegative ions that are effective at forming strong bonds with metals in the cutting solution of Li, in order to achieve the same effect of capturing dissolved metal ions [pg. 2, âInvention contentâ], with predictable results. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure: The additionally cited references are cited to show silicon ingot cutting solutions [Abstracts]. Any inquiry concerning this communication or earlier communications from the examiner should be directed to CHRISTOPHER M REMAVEGE whose telephone number is (571)270-5511. The examiner can normally be reached Monday-Friday 10:00 AM - 3:30 PM. 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For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /CHRISTOPHER REMAVEGE/Examiner, Art Unit 1713