Applied materials, inc. (20240266185). SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL RELATIVE TO METAL-DOPED BORON FILMS simplified abstract

SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL RELATIVE TO METAL-DOPED BORON FILMS

Organization Name

applied materials, inc.

Inventor(s)

Han Wang of Sunnyvale CA (US)

Yu Yang of Sunnyvale CA (US)

Jing Zhang of Santa Clara CA (US)

Aykut Aydin of Sunnyvale CA (US)

Guoqing Li of Santa Clara CA (US)

Guangyan Zhong of Sunnyvale CA (US)

Rui Cheng of San Jose CA (US)

Gene H. Lee of San Jose CA (US)

Srinivas Guggilla of San Jose CA (US)

Sinae Heo of Santa Clara CA (US)

Eswaranand Venkatasubramanian of Santa Clara CA (US)

Abhijit Basu Mallick of Sunnyvale CA (US)

Karthik Janakiraman of San Jose CA (US)

SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL RELATIVE TO METAL-DOPED BORON FILMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240266185 titled 'SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL RELATIVE TO METAL-DOPED BORON FILMS

The patent application describes a method for semiconductor processing involving depositing a metal-doped boron-containing material on a substrate in a processing chamber.

• Metal-doped boron-containing material includes tungsten as a metal dopant and the substrate is made of a silicon-containing material.
• Additional materials can be deposited over the metal-doped boron-containing material, including patterned photoresist material.
• The pattern from the photoresist material is transferred to the metal-doped boron-containing material.
• Etching of the metal-doped boron-containing material is done with a chlorine-containing precursor, while the silicon-containing material is etched with a fluorine-containing precursor.
• The metal dopant enhances the etch rate of the silicon-containing material.
• The metal-doped boron-containing material is removed from the substrate using a halogen-containing precursor.

Potential Applications: - Semiconductor manufacturing - Microelectronics industry

Problems Solved: - Improved etching processes in semiconductor manufacturing - Enhanced control over material deposition and removal

Benefits: - Higher precision in semiconductor processing - Increased efficiency in etching processes

Commercial Applications: - Production of integrated circuits - Manufacturing of electronic devices

Questions about Metal-Doped Boron-Containing Material: 1. How does the metal dopant enhance the etch rate of the silicon-containing material?

  The metal dopant increases the reactivity of the material, leading to a faster etching process.

2. What are the advantages of using a halogen-containing precursor to remove the metal-doped boron-containing material?

  Halogen-containing precursors are effective in breaking down the material for easy removal without damaging the substrate.

Original Abstract Submitted

exemplary semiconductor processing methods may include depositing a metal-doped boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. the metal-doped boron-containing material may include a metal dopant comprising tungsten. the substrate may include a silicon-containing material. the methods may include depositing one or more additional materials over the metal-doped boron-containing material. the one or more additional materials may include a patterned photoresist material. the methods may include transferring a pattern from the patterned photoresist material to the metal-doped boron-containing material. the methods may include etching the metal-doped boron-containing material with a chlorine-containing precursor. the methods may include etching the silicon-containing material with a fluorine-containing precursor. the metal dopant may enhance an etch rate of the silicon-containing material. the methods may include removing the metal-doped boron-containing material from the substrate with a halogen-containing precursor.